Title :
The impact of process optimization on planar THz-Schottky device reliability
Author :
Mottet, Bastian ; Sydlo, Cezary ; Kögel, Benjamin ; De Robillard, Quentin ; Cojocari, Oleg ; Hartnagel, H.L.
Author_Institution :
Inst. of Microwave Eng., Darmstadt Univ. of Technol., Germany
Abstract :
The technological complexity as well as space-application quality standards require sophisticated process control and optimization for reliability improvement of planar THz-Schottky devices. Degradation mechanisms are initiated using, the Transmission Line Pulse (TLP)-method and monitored as a function of the number of applied pulses. The degradation analysis is performed by IV-measurements on the one side and by Transmission electron microscopy (TEM) on the other side.
Keywords :
Schottky effect; Schottky gate field effect transistors; electric breakdown; process monitoring; semiconductor device reliability; space vehicle electronics; transmission electron microscopy; TEM; applied pulses; degradation mechanisms; planar THz-Schottky device reliability; process control; process optimization; reliability improvement; space-application quality standards; technological complexity; Degradation; Fabrication; Life estimation; Microwave technology; Plasma measurements; Process control; Space technology; Stress; Submillimeter wave technology; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315396
