Title :
A low voltage high precision CMOS bandgap reference
Author :
Xing, Xinpeng ; Wang, ZhiHua ; Li, DongMei
Author_Institution :
Tsinghua Univ., Beijing
Abstract :
In this paper, a low voltage bandgap reference with high precision is presented. Utilizing current mode structure, the minimum voltage of the proposed bandgap circuit can be reduced to 900 mV. Compensated with VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10 ppm/degC in the range from 0degC to 150degC. With 1.1-V supply voltage, the power is 47 uW and the PSRR is -55 dB at DC frequency. Occupying 0.186 mm2 chip area, this bandgap reference has been verified in UMC 0.18um mixed mode CMOS technology.
Keywords :
CMOS integrated circuits; low-power electronics; reference circuits; bandgap circuit; current mode structure; high precision CMOS; low voltage bandgap reference; power 47 muW; size 0.18 mum; temperature 0 C to 150 C; voltage 1.1 V; CMOS analog integrated circuits; CMOS technology; DC-DC power converters; Linearization techniques; Low voltage; Microelectronics; Operational amplifiers; Photonic band gap; Resistors; Temperature;
Conference_Titel :
Norchip, 2007
Conference_Location :
Aalborg
Print_ISBN :
978-1-4244-1516-8
Electronic_ISBN :
978-1-4244-1517-5
DOI :
10.1109/NORCHP.2007.4481079
