Title :
Tests for word-oriented content addressable memories
Author :
Xuemei, Zhao ; Yizheng, Ye ; Chunxu, Chen
Author_Institution :
Microelectron. Center, Harbin Inst. of Technol., China
Abstract :
A new efficient test approach of functional faults in word-oriented content addressable memories (CAM) is presented. New functional fault models of CAM, based on physical defects are given, taken from traditional functional fault models for SRAM. All functional faults of CAM are classified into OR faults (ORFs) and AND faults (ANDFs). To test intra-word and inter-word faults, different data background sequences for word-oriented CAM are proposed. A whole test strategy, include three steps, is presented to test word-oriented dual-port CAMs thoroughly.
Keywords :
SRAM chips; content-addressable storage; fault diagnosis; integrated circuit modelling; integrated circuit testing; logic testing; AND faults; ANDF; CAM functional fault models; March algorithms; OR faults; ORF; SRAM; data background sequences; fault classification; inter-word faults; intra-word faults; physical defect based models; spot defects; test strategies; word-oriented content addressable memories; word-oriented dual-port CAM testing; Active appearance model; Associative memory; Passive optical networks; Testing;
Conference_Titel :
Test Symposium, 2002. (ATS '02). Proceedings of the 11th Asian
Print_ISBN :
0-7695-1825-7
DOI :
10.1109/ATS.2002.1181703
