Tests for word-oriented content addressable memories

Author

Xuemei, Zhao ; Yizheng, Ye ; Chunxu, Chen

Author_Institution

Microelectron. Center, Harbin Inst. of Technol., China

fYear

2002

fDate

18-20 Nov. 2002

Firstpage

151

Lastpage

156

Abstract

A new efficient test approach of functional faults in word-oriented content addressable memories (CAM) is presented. New functional fault models of CAM, based on physical defects are given, taken from traditional functional fault models for SRAM. All functional faults of CAM are classified into OR faults (ORFs) and AND faults (ANDFs). To test intra-word and inter-word faults, different data background sequences for word-oriented CAM are proposed. A whole test strategy, include three steps, is presented to test word-oriented dual-port CAMs thoroughly.

Keywords

SRAM chips; content-addressable storage; fault diagnosis; integrated circuit modelling; integrated circuit testing; logic testing; AND faults; ANDF; CAM functional fault models; March algorithms; OR faults; ORF; SRAM; data background sequences; fault classification; inter-word faults; intra-word faults; physical defect based models; spot defects; test strategies; word-oriented content addressable memories; word-oriented dual-port CAM testing; Active appearance model; Associative memory; Passive optical networks; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium, 2002. (ATS '02). Proceedings of the 11th Asian

ISSN

1081-7735

Print_ISBN

0-7695-1825-7

Type

conf

DOI

10.1109/ATS.2002.1181703

Filename

1181703