Study of magnesium doped gallium nitride films grown by low pressure-metalorganic chemical vapor deposition

Author

Guarneros, C. ; Sánchez, V.

Author_Institution

Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City, Mexico

fYear

2009

fDate

10-13 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

We present results of room temperature and low temperature photoluminescence (PL) measurements of GaN:Mg grown by low pressure metalorganic chemical vapor deposition. The effect on these PL measurements with different Mg concentrations was investigated. The luminescence from p-type Mg-doped samples is dominated by shallow-donor-shallow-acceptor pair recombination and by deep blue centers at 3.0 eV. The X-ray pattern shows that the p-GaN layers grow with (0002) preferential orientation. The GaN:Mg layers thermal annealing does not show significant changes in PL and Hall effect measurements.

Keywords

Hall effect; III-V semiconductors; MOCVD; annealing; colour centres; doping profiles; gallium compounds; impurity states; magnesium; photoluminescence; semiconductor doping; semiconductor growth; semiconductor thin films; texture; wide band gap semiconductors; (0002) preferential orientation; GaN:Mg; Hall effect measurements; X-ray pattern; deep blue centers; low pressure metalorganic chemical vapor deposition; low temperature photoluminescence; magnesium doped gallium nitride films; room temperature photoluminescence; shallow-donor-shallow-acceptor pair recombination; temperature 293 K to 298 K; thermal annealing; Annealing; Chemical vapor deposition; Gallium nitride; Hall effect; III-V semiconductor materials; Luminescence; Magnesium; Photoluminescence; Pressure measurement; Temperature measurement; DAP emission; Hall Effect; III-Nitride semiconductors; Mg-doped GaN; Photoluminescence; thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control,CCE,2009 6th International Conference on

Conference_Location

Toluca

Print_ISBN

978-1-4244-4688-9

Electronic_ISBN

978-1-4244-4689-6

Type

conf

DOI

10.1109/ICEEE.2009.5393453

Filename

5393453