• DocumentCode
    3212688
  • Title

    The last trap that form the percolation path - the stress voltage effect

  • Author

    Cheung, Kin P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    599
  • Lastpage
    600
  • Abstract
    Recently, (IRPS2003, p.432) the author observed that when the current surge at the moment of breakdown is largely suppressed, the probability of soft breakdown occurring is drastically reduced. Instead of soft breakdown, the neutral trap density continues to increase well beyond the "\´critical" level, leading to enhanced leakage. In a recent paper, (APL, vol.83, p.2400, (2003)), the author developed a model to explain the anomalous temperature effect on thin oxide breakdown. This model is used in here, to explain the current surge effect on breakdown. The model predicts that at low stress voltage, the reduced surge current, leads to a dramatic reduction in the probability of a permanent breakdown (soft or hard) when the percolation path is formed. The implication is that the breakdown lifetime projection from standard accelerated stress test is overly pessimistic.
  • Keywords
    dielectric thin films; leakage currents; percolation; semiconductor device breakdown; semiconductor device reliability; anomalous temperature effect; enhanced leakage; neutral trap density; percolation path; permanent breakdown; soft breakdown; stress voltage effect; thin oxide breakdown; Breakdown voltage; Current density; Electric breakdown; Electron traps; Equations; Heating; Silicon; Stress; Surges; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315408
  • Filename
    1315408