Title :
Frequency dependent dynamic charge trapping in HfO2 and threshold voltage instability in MOSFETs
Author :
Shen, C. ; Yu, H.Y. ; Wang, X.P. ; Li, M.-F. ; Yeo, Y.C. ; Chan, Daniel S H ; Bera, K.L. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
In this paper, we perform the first investigation of biased threshold voltage instability (BTI) in MOSFETs with MOCVD HfO2 gate dielectrics under both static and dynamic stress. For an ac stress of a given gate voltage amplitude, we observed reduction of BTI degradation with an increase in stress frequency for both n- and p-MOSFETs. A physical model that accounts for two-step procedure of trap activation (de-activation) and carrier capture (emission) in the HfO2 dielectric under stress is proposed. Simulation results based on the new model shows good agreement with all experiment data.
Keywords :
MOSFET; hafnium compounds; interface states; semiconductor device breakdown; semiconductor device reliability; HfO2; MOSFETs; biased threshold voltage instability; carrier capture; dynamic stress; frequency dependent dynamic charge trapping; gate voltage amplitude; static stress; threshold voltage instability; trap activation; two-step procedure; Degradation; Dielectrics; Electron traps; Frequency dependence; Hafnium oxide; MOSFET circuits; Semiconductor device modeling; Silicon; Stress; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315409
