DocumentCode :
3212778
Title :
Integral transport approach for molecular processes in inertial electrostatic devices
Author :
Emmert, G.A. ; Santarius, J.F.
Author_Institution :
Fusion Technol. Inst., Univ. of Wisconsin, Madison, WI, USA
fYear :
2009
fDate :
1-5 June 2009
Firstpage :
1
Lastpage :
1
Abstract :
An inertial electrostatic device (IEC) consists of a chamber containing nearly transparent, concentric wire grids with a high voltage difference between them. Typical UW IEC experiments run at moderate pressures, ~0.3 Pa (~2 mtorr), so atomic and molecular processes can be important. Ions created in a source region pass through the anode grid primarily as an arbitrary mixture of D+, D2 +, and D3 + ions and, while being accelerated radially by the electrostatic potential, interact with the background gas to produce a source of cold ions (D+ and D2 +) through interactions with the background D2 gas. These cold ions are accelerated by the potential and produce additional cold ions through interactions with the background gas. A 1-D model for the effect of various molecular and atomic processes (charge exchange, ion impact ionization, and dissociative processes) between deuterium ions (D+, D2 +, and D3 +) and the background gas on the performance of spherical, gridded IEC devices has been developed. This formalism includes the bouncing motion of ions in the potential well and sums over all generations of cold ions. This leads to a set of coupled Volterra integral equations, which are solved numerically to yield the energy spectrum of the ion and fast neutral flux; the resulting neutron production rate is calculated. Recent improvements in the model, including non-zero ion birth velocities from dissociation reactions, will be discussed. Comparison with experimental data for the Wisconsin IEC devices will be presented.
Keywords :
Volterra equations; charge exchange; deuterium; dissociation; electrostatic devices; ion sources; ionisation; plasma collision processes; 1D model; D2 +; D3 +; D+; UW IEC experiments; anode grid; atomic process effects; background D2 gas interactions; charge exchange; cold ion source; coupled Volterra integral equations; deuterium ions; dissociative processes; electrostatic potential; fast neutral flux energy spectrum; inertial electrostatic devices; integral transport approach; ion flux energy spectrum; ion impact ionization; molecular process effects; molecular processes; neutron production rate; potential well ion bouncing motion; spherical gridded IEC devices; Acceleration; Anodes; Deuterium; Electrostatic devices; IEC; Impact ionization; Integral equations; Potential well; Voltage; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on
Conference_Location :
San Diego, CA
ISSN :
0730-9244
Print_ISBN :
978-1-4244-2617-1
Type :
conf
DOI :
10.1109/PLASMA.2009.5227376
Filename :
5227376
Link To Document :
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