Title :
High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping
Author :
Lee, J.H. ; Shih, J.R. ; Yu, K.F. ; Wu, Y.H. ; Wu, J.Y. ; Yang, J.L. ; Hou, C.S. ; Ong, T.C.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
The Cu metal interconnect under TLP stress can not be treated as the constant current stress. The increase in the metal interconnect length at GGNMOS drain can improve device´s MM failure threshold but degrade device´s HBM failure threshold and IT2.
Keywords :
CMOS integrated circuits; copper; electrostatic discharge; integrated circuit interconnections; integrated circuit reliability; Cu interconnect; ESD zapping; failure threshold; high current characteristics; transmission-line pulse stress; Copper; Electrical resistance measurement; Electrostatic discharge; Protection; Resistors; Stress measurement; Temperature; Thermal stresses; Transmission lines; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315412
