DocumentCode
3212785
Title
High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping
Author
Lee, J.H. ; Shih, J.R. ; Yu, K.F. ; Wu, Y.H. ; Wu, J.Y. ; Yang, J.L. ; Hou, C.S. ; Ong, T.C.
Author_Institution
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
fYear
2004
fDate
25-29 April 2004
Firstpage
607
Lastpage
608
Abstract
The Cu metal interconnect under TLP stress can not be treated as the constant current stress. The increase in the metal interconnect length at GGNMOS drain can improve device´s MM failure threshold but degrade device´s HBM failure threshold and IT2.
Keywords
CMOS integrated circuits; copper; electrostatic discharge; integrated circuit interconnections; integrated circuit reliability; Cu interconnect; ESD zapping; failure threshold; high current characteristics; transmission-line pulse stress; Copper; Electrical resistance measurement; Electrostatic discharge; Protection; Resistors; Stress measurement; Temperature; Thermal stresses; Transmission lines; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315412
Filename
1315412
Link To Document