Nano SON MOSFETs using high-K dielectric for better performance

Power consumption has always been one of the driving factors for acceptance of any new technology in the field of electronics .It is well known that SON is a brilliant candidate in place of bulk MOS for use in CMOS technology. In our paper we investigate the modification of the threshold voltages in a Silicon-on-Nothing (SON) device by changing the dielectric material layer resting below the front gate metal. For our analysis we have computed two dimensional potential profiles simultaneously in the channel as well as in the buried oxide layer. Variation of the threshold voltage by altering the front gate oxide material is computed from analytical calculation of the respective compact model. Comparison shows Hafnium dioxide should be the best choice for usage as the gate dielectric.