Title :
Impact of temperature variation on CNTFET device characteristics
Author :
Sinha, Sujeet Kumar ; Chaudhury, Santanu
Author_Institution :
Electr. Eng. Dept., NIT, Silchar, India
Abstract :
In this paper we compare and justify the advantage of CNTFET devices over MOSFET devices in nanometer regime, by varying oxide thickness. Thereafter we have analyzed the effect of temperature in the characteristics of CNTFET devices. After simulation of Stanford nano-model-39 of CNTFET on HSPICE tool we observed that the effect of temperature on threshold voltage of CNTFET is negligibly small. Since there is little variation in threshold voltage so the leakage power due to temperature in scaled down scenario is very less compare to MOSFET devices.
Keywords :
MOSFET; carbon nanotube field effect transistors; CNTFET device characteristics; HSPICE tool; MOSFET device; Stanford nanomodel-39 simulation; carbon nanotube; oxide thickness; temperature variation; CNTFETs; Carbon nanotubes; Logic gates; MOSFET; Quantum capacitance; Temperature; Threshold voltage; CNTFET; MOSFET; oxide thickness; temperature; threshold voltage;
Conference_Titel :
Control, Automation, Robotics and Embedded Systems (CARE), 2013 International Conference on
Conference_Location :
Jabalpur
DOI :
10.1109/CARE.2013.6733774
