Numerical simulation model of compositionally graded optimized radiation hard InGaN multi-junction space solar cell

Radiation hard and changeable band gap ternary InGaN multi junction series connected solar cell is theoretically investigated and also numerically modelled and analysed using modern TCAD tool. Significant high theoretical efficiency up-to 39.20% is achieved for triple junction InGaN cell using realistic material parameters. Optimisation is performed by varying Indium composition, resulting in a change of an optical property and band gap energy that closely matches for the AMO solar spectrum illumination. Then, the model has been validated with experimental data from various recent literatures. The results of this simulation demonstrate that InGaN is potentially an excellent semiconductor photovoltaic material especially for space application.