Title :
Electromigration performance enhancement of Cu interconnects with PVD Ta cap
Author :
Gajewski, Donald A. ; Meixner, Tom ; Feil, Bill ; Lien, Mitch ; Walls, James
Author_Institution :
Motorola SPS, Chandler, AZ, USA
Abstract :
We demonstrate an electromigration (EM) performance enhancement of Cu interconnects with PVD Ta cap. The activation energy is higher than for more conventional caps such as silicon nitride, yet uses the same tools and materials as the conventional barrier/seed process, as opposed to electroless Pd or CoWP deposition.
Keywords :
electromigration; integrated circuit interconnections; integrated circuit reliability; tantalum; vapour deposited coatings; Cu; Cu interconnects; PVD Ta cap; Ta; activation energy; conventional barrier/seed process; electromigration performance enhancement; Atherosclerosis; CMOS process; CMOS technology; Chemicals; Dielectrics; Electromigration; Electrons; Fabrication; Silicon; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315422
