Title :
CMOS transistor electrical ageing experiments to build VHDL-AMS behavioral models
Author :
Mongellaz, Benoit ; Marc, Frau ; Danto, Yves
Author_Institution :
Lab. IXL, Bordeaux I Univ., Talence, France
Abstract :
This paper presents an experimental case study of CMOS technology ageing. Our approach is based on a methodology that implies experimental tests to evaluate electrical ageing effects on MOSFET. The experimental data set is used to build a MOSFET device ageing VHDL-AMS model. Then, this ageing model is used to build an OTA ageing VHDL-AMS model. This two electrical ageing models are respectively used in simulation to evaluate ageing effects on electrical performances.
Keywords :
CMOS integrated circuits; MOSFET; ageing; electric breakdown; integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; CMOS transistor electrical ageing experiments; VHDL-AMS behavioral models; electrical ageing effects; Aging; CMOS technology; Circuit simulation; Equations; Failure analysis; MOSFET circuits; Physics; Predictive models; Semiconductor device modeling; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315433
