Title :
Soft breakdown effects on MOS switch and passive mixer
Author :
Sadat, Anwar ; Liu, Yi ; Yuan, Jiann ; Xie, Huikai
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.
Keywords :
capacitor switching; dielectric thin films; electric breakdown; field effect transistor switches; mixers (circuits); semiconductor device breakdown; semiconductor device reliability; 0.16 micron; MOS switch; passive mixer; soft breakdown effects; time constant; Breakdown voltage; Capacitance; Degradation; Electric breakdown; Electrical resistance measurement; MOSFETs; Mixers; Stress measurement; Switches; Switching circuits;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315435
