Title :
New screen methodology for ultra thin gate oxide technology
Author :
Wang, Aaron ; Wu, C.H. ; Shiue, R.Y. ; Huang, H.M. ; Wu, Kemeth
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
Result of this study shows that Less Noise Margin (LNM) dice have reliability weakness in ultra thin gate oxide technologies. High temperature chip probing (CP) test can narrow down noise margin and screen out the weak LNM dice effectively by functional test. Moreover, this paper also indicates that circuit propagation delay and VDDmin are effective indexes to assess reliability risk.
Keywords :
dielectric thin films; integrated circuit reliability; integrated circuit testing; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; Less Noise Margin dice; assess reliability risk; functional test; high temperature chip probing test; reliability weakness; screen methodology; ultra thin gate oxide technology; Bismuth; Circuit noise; Circuit testing; Degradation; Noise figure; Performance evaluation; Random access memory; Semiconductor device noise; Stress; Voltage control;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315438
