• DocumentCode
    3213509
  • Title

    Mechanism for reduced NBTI effect under pulsed bias stress conditions

  • Author

    Zhu, B. ; Suehle, J.S. ; Bernstein, J.B.

  • Author_Institution
    Dept. of Mech. Eng., Maryland Univ., College Park, MD, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    689
  • Lastpage
    690
  • Abstract
    A series of experiments are conducted to study the physical mechanism of reduced NBTI effects observed under pulsed bias conditions. A reduction of Vth and Ion is observed for pulse periods shorter than critical time constants that are believed to be associated with hole trapping and detrapping processes. A two time constant model is developed to explain the reduction of Vth and Ion as a function of pulse repetition frequency.
  • Keywords
    MOSFET; annealing; hole traps; interface states; semiconductor device breakdown; semiconductor device reliability; critical time constants; hole detrapping processes; hole trapping; pulse repetition frequency; pulsed bias stress conditions; reduced NBTI effect; two time constant model; Annealing; Charge measurement; Current measurement; Educational institutions; Frequency; Niobium compounds; Stress measurement; Temperature; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315453
  • Filename
    1315453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3213509