Nanoscale SOI MOSFETs with double step buried oxide: A novel structure for suppressed self-heating effects

Design consideration for an 80 nm channel length SOI MOSFET employing double step buried oxide (DSBO) is presented. The electrical characteristics and temperature distribution are analyzed and compared with conventional silicon-on-insulator (C-SOI) MOSFETs. The DSBO devices are shown to have better leakage and subthreshold characteristics. Furthermore, the channel temperature is reduced during high-temperature operation and drain current increase suggesting that DSBO can mitigate the self-heating penalty effectively. Our study suggests that DSBO is a suitable alternative to silicon dioxide as the buried dielectric in SOI, and expands the application of SOI to high temperature.