Title :
Temperature dependence of propagation delay characteristic in FinFET circuits
Author :
Soleimani, S. ; Afzali-Kusha, A. ; Forouzandeh, B.
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, we investigate the temperature dependence of delay propagation characteristic of FinFET circuits. The study is performed on several digital circuits including inverter, NAND, NOR, XOR and full-adder implemented in a 32-nm FinFET technology. The results show that the speed of the FinFET circuits is enhanced when the temperature is increased. The temperature dependencies of the FinFET and MOSFET devices and circuits are also compared.
Keywords :
MOSFET; NAND circuits; NOR circuits; adders; delay circuits; invertors; temperature; FinFET circuits; FinFET technology; MOSFET devices; NAND; NOR; XOR; delay propagation characteristic; digital circuits; full-adder; inverter; propagation delay characteristic; size 32 nm; temperature dependence; Digital circuits; FETs; FinFETs; Fluctuations; MOSFET circuits; Microelectronics; Propagation delay; Silicon on insulator technology; Temperature dependence; Threshold voltage; FinFET circuits; High temperature characteristic; supply voltage scaling; temperature variations;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393513
