Title :
A novel nanoscale tunnel FET structure for increasing on/off current ratio
Author :
Vadizadeh, Mahdi ; Fathipour, Morteza ; Amid, Arash
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, we have shown that off-state current in the tunneling field effect transistor (TFET) can be reduced dramatically by using an ¿asymmetric¿ gate oxide thickness and employing gate work function engineering. This procedure does not affect driving current while reduces Ioff by 5 orders magnitude, hence obtained the noticeable of Ion/Ioff ratio. We discuss optimization of Ion/Ioff ratio and investigate the effect of scaling on the Ion/Ioff ratio in the proposed structure.
Keywords :
MOSFET; optimisation; work function; asymmetric gate oxide thickness; gate work function engineering; nanoscale tunnel FET structure; on/off current ratio; optimization; FETs; Microelectronics; Nanostructures; Band To Band Tunneling (BTBT); Tunneling leakage current;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393516
