Title :
Three-dimensional TCAD Process and Device Simulations
Author :
Avci, I. ; Balasingam, P. ; El Sayed, K. ; Gharib, J. ; Johnson, M.D. ; Kells, K. ; Kiralyfalvi, G. ; Koltyzhenkov, V. ; Kucherov, A. ; Lyumkis, E. ; Penzin, O. ; Polsky, B. ; Rao, V. ; Simeonov, S.D. ; Strecker, N. ; Tan, Z. ; Villablanca, L. ; Fichtner,
Author_Institution :
Synopsys Inc., Mountain View
Abstract :
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. [1]) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process.
Keywords :
MOSFET; semiconductor technology; technology CAD (electronics); 3D NMOSFET; 3D oxidation simulations; PMOSFET; Sentaurus TCAD; Sentaurus process; device simulations; electrical device characteristics; shallow trench isolations; shrinking feature sizes; stress engineering; three-dimensional TCAD process; Annealing; Boron; Etching; Implants; MOSFET circuits; Material properties; Robustness; Shadow mapping; Stress; Tellurium;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0267-0
DOI :
10.1109/UGIM.2006.4286350
