DocumentCode
3213839
Title
MESFET small signal model parameter extraction using particle swarm optimization
Author
Sabat, Samrat L. ; Raju, Vijay ; Ali, Layak
Author_Institution
Sch. of Phys., Univ. of Hyderabad, Hyderabad, India
fYear
2008
fDate
14-17 Dec. 2008
Firstpage
208
Lastpage
211
Abstract
This paper presents a novel particle swarm based optimization technique to extract small signal equivalent circuit model parameters of a fabricated GaAs MESFET device. The small signal model includes 16 different circuit elements and all are successfully and accurately extracted using the proposed technique. The proposed technique overcomes the difficulties of initial guess of solution and low convergence rate that occurs in conventional optimizer. The effectiveness of results show that the proposed algorithm is robust and accurately provides physically meaningful values for all the circuit elements. The efficiency of this approach is also demonstrated by the results that provides a good fit between measured and modeled S-parameter data over broad range of frequency between 0.5 to 25 GHz.
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; particle swarm optimisation; semiconductor device manufacture; semiconductor device models; GaAs; MESFET; S-parameter data; circuit elements; extraction; frequency 0.5 GHz to 25 GHz; particle swarm optimization; small signal equivalent circuit model parameters; Data mining; Equivalent circuits; Gallium arsenide; MESFET circuits; Microelectronics; Microwave devices; Optimization methods; Parameter extraction; Particle swarm optimization; Scattering parameters; Extraction methodology; MESFET small signal model; Particle Swarm Optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location
Sharjah
Print_ISBN
978-1-4244-2369-9
Electronic_ISBN
978-1-4244-2370-5
Type
conf
DOI
10.1109/ICM.2008.5393521
Filename
5393521
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