DocumentCode :
3213976
Title :
Statistical latency analysis of carbon nanotube interconnects due to contact resistance variations
Author :
Kuruvilla, Nisha ; Raina, J.P.
Author_Institution :
Dept. of Electron., Coll. of Eng., Chengannur, Chengannur, India
fYear :
2008
fDate :
14-17 Dec. 2008
Firstpage :
296
Lastpage :
299
Abstract :
Single walled carbon nanotubes (SWCNTs) and bundled CNTs have emerged as promising candidates for future VLSI interconnects material due to their excellent inherent electrical and thermal properties. The work in this paper attempts to statistically analyse the effect of process variation in contact resistance on the interconnect delay by using Monte-Carlo method. The work in this paper attempts to statistically analyse the effect of process variation in contact resistance on the latency of CNT interconnect using Monte-Carlo method. This paper makes an effort to evaluate the suitability of SWCNTs and bundled CNTs as futuristic VlSI interconnects in par with ITRS predictions with its inherent process variations in the contact resistance value. It is found that bundled CNTs can offer better performance than prediction and the performance of SWCNTs are getting highly limited by contact resistance variations.
Keywords :
Monte Carlo methods; VLSI; carbon nanotubes; contact resistance; integrated circuit interconnections; nanotube devices; statistical analysis; C; Monte-Carlo method; VLSI interconnects material; bundled CNTs; contact resistance; interconnect delay; single walled carbon nanotubes; statistical latency analysis; CMOS technology; Carbon nanotubes; Chemical technology; Contact resistance; Copper; Delay effects; Frequency; Kinetic theory; Performance analysis; Very large scale integration; Bundled CNT; Carbon nanotube; contact resistance; interconnect; performance analysis; single walled carbon nanotube; statistical analysis of latency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
Type :
conf
DOI :
10.1109/ICM.2008.5393530
Filename :
5393530
Link To Document :
بازگشت