Title :
High-power GaAS photoconductive semiconductor switches triggered with picosecond laser pulse
Author :
Yuan, J. ; Li, H. ; Liu, H. ; Xie, W. ; Jiang, W. ; Wang, X. ; Liu, J.
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
In order to generate ultra-fast electrical pulses with GaAs photoconductive semiconductor switch, a novel facility will be designed and fabricated, and picosecond laser pulse will be used to trigger the PCSS. The bias voltage will be limited and the PCSS will operate in linear mode. The FWHM and rise time of the photocurrent usually are larger than that of laser pulse, and loop inductance is one of the main factors, so coaxial configuration is preferred. Capacitors, current viewing resistor, and the PCSS will be integrated into the coaxial configuration. Photoconductivity tests will be performed recently, and initial experimental results will be presented.
Keywords :
photoconducting switches; photoconductivity; GaAs photoconductive semiconductor switch; bias voltage; coaxial configuration; current viewing resistor; high-power GaAS photoconductive semiconductor switches; loop inductance; photoconductivity test; photocurrent; picosecond laser pulse; ultra-fast electrical pulses; Coaxial components; Gallium arsenide; Laser modes; Optical design; Optical pulse generation; Optical pulses; Photoconducting devices; Photoconductivity; Semiconductor lasers; Switches;
Conference_Titel :
Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2617-1
DOI :
10.1109/PLASMA.2009.5227436
