Title :
Compact Models for the I-V Characteristics of Double Gate and Surround Gate MOSFETs
Author :
Morris, H. ; Cumberbatch, E. ; Abebe, H. ; Tyree, V.
Author_Institution :
San Jose State Univ., San Jose
Abstract :
The models presented by Lu and Taur, for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present compact solutions for the equations based on the Lambert function. These solutions are shown to be accurate compared with exact numerical solutions.
Keywords :
MOSFET; numerical analysis; semiconductor device models; I-V characteristics; Lambert function; double gate MOSFET; surround gate MOSFET; transcendental equation; Algorithm design and analysis; Difference equations; Geometry; Low voltage; MOSFETs; SPICE; Semiconductor device modeling; Tunneling; Analytic solutions; compact model; double gate MOSFETs; surround gate MOSFETs;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0267-0
DOI :
10.1109/UGIM.2006.4286365
