Title :
Active inductor symbolic analysis
Author :
MacEachern, Leonard ; Olszewski, Dan ; Mahmoud, Samy
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
Enhanced analytical equations are derived to predict the inductance and series resistance of a common active inductor configuration. The equations, based on MOSFET small-signal parameters, are used to predict the inductance and series resistance of an active inductor implemented in a 0.18 ¿m CMOS process. The inductor´s characteristics are presented, demonstrating analytical equation accuracy and circuit functionality between 70 MHz and 700 MHz.
Keywords :
CMOS integrated circuits; MOSFET; inductors; semiconductor device models; CMOS; MOSFET small-signal parameters; active inductor configuration; active inductor symbolic analysis; analytical equations; frequency 70 MHz; frequency 700 MHz; inductance prediction; series resistance prediction; size 0.18 mum; Active inductors; CMOS technology; Circuits; Equations; Gyrators; Impedance; Inductance; MOSFETs; Q factor; Transconductors;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393558
