Title : 
Simulation and analysis of quantum dot laser based on tunneling injection
         
        
            Author : 
Hashtroodi, M. ; Rostami, A. ; Ghazisaeedi, N.
         
        
            Author_Institution : 
Dept. of Electr. Eng., Islamic Azad Univ. of Tabriz, Tabriz, Iran
         
        
        
        
        
        
            Abstract : 
In this paper we propose a new circuit model for a tunneling injection quantum dot lasers (TI-QDL). The detail of our model is based on independent rate equations. The carrier density, optical modes and their powers are described independently. The proposed equivalent circuit is simulated by a Pspice and the results are compared with a model that the rate equations are solved numerically.
         
        
            Keywords : 
SPICE; equivalent circuits; laser modes; quantum dot lasers; tunnelling; Pspice; carrier density; equivalent circuit; optical modes; quantum dot laser; rate equations; tunneling injection; Integrated circuit modeling; Length measurement; Nanoscale devices; Radiative recombination; Surface emitting lasers; ES; GS; QD-TI lasers; tunneling effect;
         
        
        
        
            Conference_Titel : 
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
         
        
            Conference_Location : 
Tehran
         
        
            Print_ISBN : 
978-1-4673-1149-6
         
        
        
            DOI : 
10.1109/IranianCEE.2012.6292548