DocumentCode :
3214723
Title :
High external quantum efficiency red phosphorescent light-emitting devices
Author :
Yu, Fangfang ; Zhang, Minyan ; Shang, Yuzhu ; Wei, Bin ; Li, Chong
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
Volume :
4
fYear :
2011
fDate :
29-31 July 2011
Abstract :
We report the fabrication of high-efficiency organic light-emitting diodes employing a novel red phosphor by managing charge transport properties of every functional layer. Doped hole transport layer and stepwise carrier transport system were utilized to enlarge charge injection, improve transportation and reduce drive voltage. The devices turned on at quiet low voltages of about 3~4 V. A high power efficiency of 10.63 lm/W and a stable red emission at 616 nm (chromaticity coordinate: x=0.63, y=0.35) was obtained. Especially, the maximal external quantum efficiency reached 15.5% at 18.62 cd/m2.
Keywords :
organic light emitting diodes; phosphors; quantum optics; charge injection; charge transport properties; doped hole transport layer; organic light-emitting diodes; quantum efficiency; red phosphorescent light-emitting devices; stable red emission; stepwise carrier transport; wavelength 616 nm; Artificial intelligence; Educational institutions; Extraterrestrial measurements; Green products; Indium tin oxide; Wavelength measurement; Red OLEDs; external quantum efficiency; high-efficiency; phosphor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
Type :
conf
DOI :
10.1109/ICEOE.2011.6013436
Filename :
6013436
Link To Document :
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