• DocumentCode
    3214970
  • Title

    Field emission properties of AlN nanostructures

  • Author

    Xiaohong Ji ; Jie Deng ; Weifeng Zhou ; Pengcheng Chen ; Fei Chen

  • Author_Institution
    MOE Key Lab. of Specially Functional Mater., South China Univ. of Technol., Guangzhou, China
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    363
  • Lastpage
    364
  • Abstract
    Herein, a simple approach through vapor transport and condensation process for the synthesis of various large-scale AlN nanostructures has been demonstrated using AICI3 powder and NH3 as starting materials. Their structural and field emission (FE) properties were characterized. The nanostructure dependences of FE properties and the possible mechanism involved have been investigated and discussed.
  • Keywords
    III-V semiconductors; aluminium compounds; condensation; field emission; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; wide band gap semiconductors; AICI3 powder; AlN; Si; condensation; field emission properties; nanostructure dependences; nanostructures; structural properties; vapor transport; Nanostructures; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644140
  • Filename
    5644140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3214970