DocumentCode :
3214970
Title :
Field emission properties of AlN nanostructures
Author :
Xiaohong Ji ; Jie Deng ; Weifeng Zhou ; Pengcheng Chen ; Fei Chen
Author_Institution :
MOE Key Lab. of Specially Functional Mater., South China Univ. of Technol., Guangzhou, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
363
Lastpage :
364
Abstract :
Herein, a simple approach through vapor transport and condensation process for the synthesis of various large-scale AlN nanostructures has been demonstrated using AICI3 powder and NH3 as starting materials. Their structural and field emission (FE) properties were characterized. The nanostructure dependences of FE properties and the possible mechanism involved have been investigated and discussed.
Keywords :
III-V semiconductors; aluminium compounds; condensation; field emission; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; wide band gap semiconductors; AICI3 powder; AlN; Si; condensation; field emission properties; nanostructure dependences; nanostructures; structural properties; vapor transport; Nanostructures; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644140
Filename :
5644140
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3214970
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