Title : 
A Novel Short-Circuit Detecting Scheme Using Turn-On Switching Characteristic of IGBT
         
        
            Author : 
Park, Byoung-Gun ; Lee, Jun-Bae ; Hyun, Dong-seok
         
        
        
        
        
        
            Abstract : 
This paper represents a novel short-circuit detecting scheme using turn-on switching characteristic of IGBT. The proposed scheme has a simple protection circuit, fast fault detection time, and low-cost devices to protect IGBT under short-circuit faults such as fault under load (FUL) and hard switching fault (HSF). The proposed short-circuit detecting scheme using turn-on switching characteristic of IGBT can be integrated as a gate drive integrated circuit (IC) or high voltage integrated circuit (HVIC) because the proposed protection circuit supplements logic and low-voltage component. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
         
        
            Keywords : 
driver circuits; fault location; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; switching; HVIC; IC; IGBT; fault detection time; gate drive integrated circuit; high voltage integrated circuit; low-cost devices; protection circuit; short-circuit detecting scheme; turn-on switching characteristics; Circuit faults; Electrical fault detection; Fault detection; Inductance; Insulated gate bipolar transistors; Protection; Regions; Roentgenium; Switching circuits; Voltage;
         
        
        
        
            Conference_Titel : 
Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE
         
        
            Conference_Location : 
Edmonton, Alta.
         
        
        
            Print_ISBN : 
978-1-4244-2278-4
         
        
            Electronic_ISBN : 
0197-2618
         
        
        
            DOI : 
10.1109/08IAS.2008.350