Title :
RF enhanced PECVD system for CNT field-emitter cathode array deposition
Author :
Kim, Soo Young ; Sanders, Jason M. ; Sozer, Esin B. ; Lin, Yung Hsu ; Shui, Qiong ; Kuthi, Andras ; Gundersen, Martin A.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Summary form only given. We present the development of a plasma-enhanced chemical vapor deposition (PECVD) system for deposition of multi-walled, vertically aligned Carbon Nano-Tubes (CNT) as cathode field emitter sites in a large (1000 x 1000), 1 cm2 area array. The CNT deposition is compatible with the use of Si wafers containing the individual emitter site ballasts in the form of Si n-type JFETs and series source resistors. In earlier attempts to deposit CNTs in the PECVD system using only DC power for combined plasma, heat, and bias E-field generation severe arcing was observed which frustrated the yield. By adding modest amounts of RF power to the system the bias generation and heating is decoupled from the plasma generation, CNT growth temperatures can be lowered and the arcing on the insulator surfaces of the Si wafer is significantly reduced. Initial results from the deposition system will be presented together with the measured CNT field-emission I-V characteristics.
Keywords :
carbon nanotubes; cathode rays; field emitter arrays; junction gate field effect transistors; plasma CVD; plasma radiofrequency heating; resistors; silicon; C; CNT field-emitter cathode array deposition; DC power; E-field generation severe arcing; RF-enhanced PECVD system; Si; bias generation; field-emission I-V characteristics; heating; insulator surfaces; multiwalled vertically aligned carbon nanotubes; plasma-enhanced chemical vapor deposition; series source resistors; silicon n-type JFETs; silicon wafers; Carbon dioxide; Cathodes; Chemical vapor deposition; Cogeneration; Field emitter arrays; Plasma chemistry; Plasma measurements; Plasma temperature; Power generation; Radio frequency;
Conference_Titel :
Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2617-1
DOI :
10.1109/PLASMA.2009.5227515