Title :
Research on technology of strongly pinching diodes
Author_Institution :
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
Abstract :
Summary form only given. Structures of several types of strongly pinching diodes were introduced. The theory, pinching mechanics, and factors which influence the diodes´ characteristics were analyzed. The latest development of research on pinching focusing diodes was introduced. The merits, defects and limitation of different types of diodes were compared and analyzed. The pinching mechanics of rod-pinch diodes which were developed in the latest years was emphasized. The numerical simulation results obtained using PIC code was presented. The structure parameters of rod-pinch diode with which stable spots could be obtained and the diode was appropriate for relatively low voltage were presented. Experimental researches were carried out on FLASH II and 2MV pulsed power drivers. The X-ray dose at lm from the diode in the forward direction was about 20~30mGy. The spot diameter was about 1mm, the maximum energy was 1.8MeV.
Keywords :
pinch effect; plasma diodes; plasma simulation; PIC code; pinching diodes; pulsed power drivers; rod-pinch diodes; Diodes; Low voltage; Numerical simulation; Physics;
Conference_Titel :
Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2617-1
DOI :
10.1109/PLASMA.2009.5227520