Title :
High field tunneling magnetoresistance effects in FeCoGd(t)/AlO/FeCo multilayers
Author :
Bai, X.J. ; Yang, May ; Ge, J.J. ; You, Bin ; Zhang, Wensheng ; Zhao, X.R. ; Du, Jinyang
Author_Institution :
Dept. of Appl. Phys., Northwestern Polytech. Univ., Xi´an, China
Abstract :
Tunneling magnetoresistance (TMR) effect has been extensively studied either in MTJs [1] or in insulating granular films, but few studies have been reported on the composite structure combined them together. In this presented work, the MTJs of FeCoGd(t)/AlO/FeCo have been fabricated. Different from conventional MTJ, the FeCoGd electrode was partially oxidized. A thin granular film due to the oxidation is likely to be found at the interface between the FeCoGd electrode and the barrier. The TMR effects of the composite MTJs have been studied.
Keywords :
aluminium compounds; cobalt alloys; electrodes; gadolinium alloys; granular materials; high field effects; iron alloys; magnetic multilayers; oxidation; tunnelling magnetoresistance; FeCoGd-AlO-FeCo; electrode; high field tunneling magnetoresistance effects; magnetic tunnel junction; multilayers; oxidation; thin granular film; Nonhomogeneous media; Silicon;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644185
