Title :
Ultraviolet irradiation and soak time effect in Bi3.25La0.75Ti3O12 thin films
Author :
Xiumei Wu ; Ya Zhai ; Mingxiang Xu
Author_Institution :
Phys. Dept., Southeast Univ., Nanjing, China
Abstract :
In this paper, we mainly study the UV irradiation and soak time effect on the leakage current of BLT thin films. The BLT thin films were prepared on Pt/Ti/SiCVSi substrates to get the desired thickness of about 365 nm. The newly formed multilayer films were annealed at 750 °C for 1 h in oxygen ambient. The Pt top electrodes, with a size of 0.0314 mm2 or so, were deposited by sputtering. The leakage current was measured in a Radiant Technologies´ Precision II ferroelectric tester. The structural characterizations carried out using X-ray diffraction (XRD, D/Max-RB) indicate that the film has a typical bismuth-layered perovskite structure.
Keywords :
X-ray diffraction; annealing; bismuth compounds; ferroelectric thin films; lanthanum compounds; leakage currents; multilayers; sputter deposition; ultraviolet radiation effects; ultraviolet spectra; Bi3.25La0.75Ti3O12; Pt-Ti-SiO2-Si; Pt-Ti-SiO2-Si substrates; X-ray diffraction; XRD; annealing; bismuth-layered perovskite structure; ferroelectric tester; ferroelectric thin films; leakage current; multilayer films; soak time effect; sputter deposition; structural properties; temperature 750 degC; time 1 h; ultraviolet irradiation; Switches; Testing; Time measurement;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644192
