Ultraviolet irradiation and soak time effect in Bi3.25La0.75Ti3O12 thin films

Author

Xiumei Wu ; Ya Zhai ; Mingxiang Xu

Author_Institution

Phys. Dept., Southeast Univ., Nanjing, China

fYear

2010

fDate

14-16 Oct. 2010

Firstpage

559

Lastpage

560

Abstract

In this paper, we mainly study the UV irradiation and soak time effect on the leakage current of BLT thin films. The BLT thin films were prepared on Pt/Ti/SiCVSi substrates to get the desired thickness of about 365 nm. The newly formed multilayer films were annealed at 750 °C for 1 h in oxygen ambient. The Pt top electrodes, with a size of 0.0314 mm² or so, were deposited by sputtering. The leakage current was measured in a Radiant Technologies´ Precision II ferroelectric tester. The structural characterizations carried out using X-ray diffraction (XRD, D/Max-RB) indicate that the film has a typical bismuth-layered perovskite structure.

Keywords

X-ray diffraction; annealing; bismuth compounds; ferroelectric thin films; lanthanum compounds; leakage currents; multilayers; sputter deposition; ultraviolet radiation effects; ultraviolet spectra; Bi_3.25La_0.75Ti₃O₁₂; Pt-Ti-SiO₂-Si; Pt-Ti-SiO₂-Si substrates; X-ray diffraction; XRD; annealing; bismuth-layered perovskite structure; ferroelectric tester; ferroelectric thin films; leakage current; multilayer films; soak time effect; sputter deposition; structural properties; temperature 750 degC; time 1 h; ultraviolet irradiation; Switches; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6645-0

Type

conf

DOI

10.1109/IVESC.2010.5644192

Filename

5644192