Fabrication of patterned aligned W18O49 nanowire arrays with high field emission performances

Author

Fei Liu ; Mo, F.Y. ; Li, Luoqing ; Jin, S.Y. ; Wu, Z.L. ; Liu, Q.R. ; Chen, Jiann-Jong ; Deng, S.Z. ; Xu, N.S.

Author_Institution

Guangdong Province Key Lab. of Display Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

fYear

2010

fDate

14-16 Oct. 2010

Firstpage

525

Lastpage

525

Abstract

Intensive investigation on WO_3-x nanostructures has been carried out in the last decade because they possess extraordinary properties. Especially for application in field emission, W₁₈O₄₉ nanostructures have exhibited excellent performance. Some issues have to be addressed in fabricating vacuum microelectronic devices using W₁₈O₄₉ nanostructures, including how to realize well aligned nanostructure arrays with uniform phase and selected-area growth. Therefore, developing new approaches to synthesize patterned W₁₈O₄₉ nanostructure arrays is very necessary. Here, we report the controlled growth of patterned and aligned W₁₈O₄₉ nanowires by a simple lift-off technique.

Keywords

nanofabrication; nanopatterning; nanowires; tungsten compounds; vacuum microelectronics; W₁₈O₄₉; controlled growth; field emission performance; nanofabrication; nanostructure arrays; patterned aligned nanowire arrays; simple lift-off technique; vacuum microelectronic devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6645-0

Type

conf

DOI

10.1109/IVESC.2010.5644216

Filename

5644216