DocumentCode :
3216608
Title :
Study on the optical properties of Si quantum dots
Author :
Qiu, Z.R. ; Yu, Haoyong ; Lei, S.Y. ; Zhang, W.W.
Author_Institution :
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
522
Lastpage :
523
Abstract :
In this paper, the band gap and optical properties of hexagonal silicon quantum dots with different diameters are studied based on an ab initio calculations.
Keywords :
ab initio calculations; elemental semiconductors; energy gap; semiconductor quantum dots; silicon; Si; ab initio calculations; band gap; optical properties; silicon quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644221
Filename :
5644221
Link To Document :
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