Title :
Simulation and analysis on the electron optics properties of tri-gate FED
Author :
Liu, J.W. ; Deng, S.Z. ; Xu, N.S. ; Jun Chen
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
Field emission displays (FEDs) have attracted much attention due to its advantages of high luminance, wide viewing angle, fast response and low power consumption. The structure is one of the key issues for the success of FED. Gate structure is widely used in FED for its outstanding advantages, such as lower driving voltage, higher resolution, controllable focusing and so on. In the present work, the electron optics properties of a tri-gate FED are studied.
Keywords :
brightness; electron optics; field emission displays; low-power electronics; electron optics properties; field emission displays; gate structure; low power consumption; luminance; tri-gate FED; Educational institutions; Industries;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644233
