DocumentCode :
3217028
Title :
Superparamagnetic behavior in Fe ultrathin films on GaN(0001)
Author :
Wong, P.K.J. ; Zhang, Wensheng ; Cui, X.G. ; Will, I.G. ; Xu, Yong Bing ; Tao, Z.K. ; Li, Xin ; Xie, Z.L. ; Zhang, Rongting
Author_Institution :
Dept. of Electron., Univ. of York, York, UK
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
494
Lastpage :
495
Abstract :
In this paper, growth, structural and magnetic properties of ultrathin Fe grown on GaN(OOOl) by molecular beam epitaxy. The films and their surfaces were monitored by in-situ reflection high energy electron diffraction (RHEED) and a crystal thickness monitor. The magnetic properties of the samples were determined by a superconducting quantum interference device (SQUID) magnetometer. Superparamagnetism (SPM) of the ultrathin Fe can be activated at the ambient temperature.the hysteresis loop of an as-deposited 5 ML Fe(llO) film on GaN(0001) taken at RT and reveals that the loop on one hand has an unsaturated magnetization and on the other hand possesses tiny but noticeable Mr and Hc. These two characteristics as a whole imply a coexistence of SPM and weak FM in the ultrathin film. In order to gain further insight into this mixed magnetic state, temperature dependence of the magnetization M(T) in the form of field cooling (FC) and zero field cooling (ZFC) curves of the 5 ML sample was measured by SQUID in a T range between 5 and 300 K.
Keywords :
SQUID magnetometers; iron; magnetic cooling; magnetic epitaxial layers; magnetic hysteresis; molecular beam epitaxial growth; reflection high energy electron diffraction; superparamagnetism; Fe; GaN; hysteresis loop; molecular beam epitaxy; reflection high energy electron diffraction; superconducting quantum interference device magnetometer; superparamagnetic behavior; temperature 5 K to 300 K; ultrathin films; unsaturated magnetization; zero field cooling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644240
Filename :
5644240
Link To Document :
بازگشت