First-principles study in different doped-MgO protective layer in plasma display panels

MgO thin film is widely used as a protective layer for Alternating Current-type Plasma Display Panels (AC-PDPs) owing to its high anti-sputtering and secondary electron emitting abilities. In order to improve the secondary electron emission coefficient (γ) of MgO thin film, one successful way is to add some dopants into MgO. For example, ZnO, Si and CaO have been used as dopants in the experiments. However, the experimental observation of above effects is very difficult and expensive. The simulation analysis is convenient, cheap, fast and powerful compared to experiment measurement. The electronic structures of the M-doped (M stands for Mg, Zn, Si, Ca) MgO protective layer are studied using first-principles density functional calculations in this paper, and the doping concentration is 0.016.