Title :
Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures
Author :
Wong, P.K.J. ; Zhang, Wensheng ; Wu, Junyong ; Will, I.G. ; Xu, Yong Bing ; Farrer, I. ; Ritchie, D.A.
Author_Institution :
Dept. of Electron., Univ. of York, York, UK
Abstract :
In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.
Keywords :
III-V semiconductors; etching; gallium arsenide; iron; magnetic epitaxial layers; magnetoelectronics; metal-semiconductor-metal structures; molecular beam epitaxial growth; spin valves; vacuum deposition; Fe-GaAs-Fe; Fe-GaAs-Fe hybrid structures; GaAs membrane; GaAs/AlGaAs/n-GaAs epilayers; MBE; chemical etching; magnetic characterization; magnetic properties; molecular beam epitaxy; novel type vertical Fe-GaAs(100)-Fe spin-valve spintronic device; selective etching; ultrahigh vacuum deposition; Gallium arsenide; Iron;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644243
