Title :
Future perspective and scaling down roadmap for RF CMOS
Author :
Morifuji, E. ; Momose, H.S. ; Ohguro, T. ; Yoshitomi, T. ; Kimijima, H. ; Matsuoka, F. ; Kinugawa, M. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Microelectron Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Concept of future scaling-down for RF CMOS has been investigated in terms of fT, fmax, RF noise, linearity, and matching characteristics, based on simulation and experiments. It has been found that gate width and finger length are the key parameters especially in sub-100 nm gate length generations.
Keywords :
CMOS integrated circuits; UHF integrated circuits; field effect MMIC; impedance matching; integrated circuit manufacture; integrated circuit noise; RF CMOS; RF noise; finger length; gate length; gate width; linearity; matching characteristics; scaling-down; CMOS logic circuits; Character generation; Circuit noise; Fingers; Laboratories; Linearity; Microelectronics; Noise figure; Radio frequency; Roentgenium;
Conference_Titel :
VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-95-6
DOI :
10.1109/VLSIC.1999.797271
