Title :
Micro IDDQ test using Lorentz force MOSFETs
Author :
Nose, K. ; Sakurai, T.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
A non-disturbing and non-contacting current sensing device, namely LMOS, is proposed and experimentally shown to be effective. The LMOS enables a micro IDDQ test where the current of thousands of small circuit blocks on a chip in identifying the points of design errors and/or small margin. The scheme is helpful and this scheme can become an important debugging tool for the future complex VLSIs that achieve low standby and operation current.
Keywords :
CMOS integrated circuits; VLSI; electric current measurement; electric sensing devices; integrated circuit design; integrated circuit testing; Lorentz force MOSFETs; circuit blocks; complex VLSIs; debugging tool; design errors; micro IDDQ test; noncontacting current sensing device; nondisturbing current sensing device; operation current; standby; CMOS technology; Circuit testing; Current measurement; Leakage current; Lorentz covariance; MOSFET circuits; Magnetic fields; Power measurement; Power supplies; Voltage;
Conference_Titel :
VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-95-6
DOI :
10.1109/VLSIC.1999.797273
