Fast, radiation-hard GaAs CHIGFET op amp

Author

Subhani, Khaja F. ; DiBitonto, D. ; Pennington, T. ; Baier, Steven ; Stronczer, John

Author_Institution

Alabama Univ., Tuscaloosa, AL, USA

fYear

1993

fDate

7-9 Mar 1993

Firstpage

159

Lastpage

162

Abstract

A fast, low-noise, operational amplifier is fabricated in an industrial GaAs technology, exhibiting intrinsic radiation hardness in excess of several hundred megarads. The circuit architecture is based on GaAs/AlGaAs CHIGFETs of 1-μm channel length. The amplifier is fully monolithically integrated with low-frequency open-loop gain of 10⁵, gain-bandwidth product of 1.5 GHz, DC input offset voltage of 20 mV, slew rate of 760 V/μs, and power requirements of 30 mW. Its output voltage is linear from -3 V to +3 V within 1% accuracy. A gain of 50 kΩ is achieved for operation as a transimpedance amplifier with risetime <5 ns, which would be suitable for a preamplifier for liquid and solid ionization detectors

Keywords

CMOS analogue integrated circuits; CMOS integrated circuits; III-V semiconductors; gallium arsenide; ionisation gauges; operational amplifiers; preamplifiers; radiation hardening (electronics); -3 to 3 V; 100 dB; 30 mW; CHIGFET; GaAs-AlGaAs complementary heteroinsulated gate effect transistor; accuracy; circuit architecture; intrinsic radiation hardness; ionization detectors; operational amplifier; preamplifier; transimpedance amplifier; Bandwidth; Circuit noise; Gallium arsenide; Integrated circuit technology; Ionization; Low-frequency noise; Low-noise amplifiers; Operational amplifiers; Radiation detectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1993. Proceedings SSST '93., Twenty-Fifth Southeastern Symposium on

Conference_Location

Tuscaloosa, AL

ISSN

0094-2898

Print_ISBN

0-8186-3560-6

Type

conf

DOI

10.1109/SSST.1993.522762

Filename

522762