Title :
A monolithic integrated HEMT frontend in CPW technology from 10-50 GHz for measurement systems or broadband receivers
Author :
Heilig, R. ; Hollmann, D. ; Baumann, G.
Author_Institution :
Alcatel SEL, Pforzheim, Germany
Abstract :
In this paper the design, performance and fabrication of a broadband frontend is shown. The frontend consists of a broadband matrix distributed amplifier with a gain of about 10 dB and a noise figure of 6.5 dB, a four stages distributed amplifier with 5 dB gain and an output power of 12 dBm, and a distributed mixer with a conversion gain of 0 dB with a LO-power of 0 dBm including the LO buffer amplifier. The active devices are 0.2 /spl mu/m recessed gate AlGaAs HEMTs and the coplanar waveguide is used as the propagation medium. The devices have been simulated by using own models for the active device and the passive coplanar elements. For the mixer design a nonlinear HEMT model was used. The total size of the frontend is 6 mm/spl times/6 mm including bias networks and block capacitors.<>
Keywords :
HEMT integrated circuits; MMIC amplifiers; MMIC mixers; coplanar waveguides; distributed amplifiers; field effect MMIC; microwave receivers; millimetre wave amplifiers; millimetre wave receivers; wideband amplifiers; 0.2 micron; 10 dB; 10 to 50 GHz; 5 dB; 6.5 dB; AlGaAs; CPW technology; LO buffer amplifier; broadband frontend; broadband matrix distributed amplifier; broadband receivers; coplanar waveguide; distributed mixer; fabrication; four-stage distributed amplifier; measurement systems; monolithic integrated HEMT frontend; nonlinear HEMT model; recessed gate HEMTs; Capacitors; Coplanar waveguides; Distributed amplifiers; Fabrication; Gain; HEMTs; Noise figure; Power amplifiers; Power generation; Transmission line matrix methods;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406063