DocumentCode :
3218103
Title :
The effects of temperature profile on the growth of vertically-aligned multi-walled carbon nanotubes
Author :
Jongju Yun ; Cheesung Lee ; Seunghyun Baik
Author_Institution :
Dept. of Energy Sci., Sungkyunkwan Univ., Suwon, South Korea
fYear :
2010
fDate :
14-16 Oct. 2010
Firstpage :
428
Lastpage :
429
Abstract :
Summary form only given. Vertically-aligned multi-walled carbon nanotubes (VAMWNTs) have received extensive attention recently. The chemical vapor deposition (CVD) has been regarded as a primary candidate for the large-scale production of vertically-aligned nanotubes [1-4]. It is well known that the structural characteristics of VAMWNTs grown by CVD depend on growth parameters such as reaction time, catalyst morphology, temperature, reaction gas flow rate and pressure. Although considerable amount of research has been focused on the growth parameters of CVD, the effects of temperature profile on the VAMWNT growth still need to be clarified further. In this paper, we investigated the effects of temperature profile on the growth of nanotubes using a 60 mm inner diameter quartz tube. Catalysts were deposited on a SiO2 wafer following a previously published protocol [3,4], and identical catalysts were used in all studies. Fe (lnm)/ Al2O3 (30nm) was deposited on a SiO2 wafer by an electron beam evaporator [3,4]. In order to provide different temperature conditions, several wafers were located at different locations inside the tube furnace and other parameters such as growth time and gas flow rates were identical. As-grown VAMWNTs were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The catalyst morphology was also investigated by atomic force microscopy (AFM). The length of VAMWNTs varied from 80μm to 3cm depending on positions as shown in Figs, 1a-b. The temperature profile was found to be slightly different at each location leading to a significant difference in the growth pattern. Fig. 1c demonstrates that ID/IG ratio of VAMWNTs is varied from 0.2 to 1.41. At position #1, radial breathing modes and a small D mode were observed. The tube length and D mode were increased as the wafer was moved to the directio- of position #5. Smaller diameter tubes with shorter length were found at position #1 whereas large diameter tubes with longer length were synthesized at position #5. The effects of the temperature profile on the catalyst formation and tube diameter and length are further discussed in the full manuscript and poster.
Keywords :
Raman spectra; carbon nanotubes; catalysts; chemical vapour deposition; scanning electron microscopy; silicon compounds; transmission electron microscopy; C; Raman spectroscopy; SiO2; carbon nanotube growth; catalyst morphology; chemical vapor deposition; high resolution transmission electron microscopy; large scale production; multiwalled carbon nanotube; pressure parameter; reaction gas flow rate; reaction time; scanning electron microscopy; temperature parameter; temperature profile; vertically aligned carbon nanotube;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
Type :
conf
DOI :
10.1109/IVESC.2010.5644294
Filename :
5644294
Link To Document :
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