A W-band monolithic low noise AlGaAs/InGaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package with waveguide interface

Author

Itoh, Yoshio ; Nakayama, Makoto ; Nakahara, Kouji ; Takagi, Toshiyuki ; Sakura, Tamaki ; Yoshida, Norihiro ; Katoh, T. ; Kashiwa, Tatsuya ; Ito, Yu

Author_Institution

Electro-Optics & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

207

Abstract

A W-band monolithic low noise AlGaAs/InGaAs/GaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package has been developed for use in Advanced Microwave Scanning Radiometer. A six-stage amplifier cascading three two-stage MMIC amplifier chips is assembled on a small hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. The overall amplifier measures 12/spl times/32.8/spl times/5.4 mm/sup 3/. This is the first W-band multi-stage monolithic low noise amplifier mounted on a hermetically-sealed package.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; integrated circuit packaging; millimetre wave amplifiers; 28.1 dB; 4.3 dB; 91 GHz; Advanced Microwave Scanning Radiometer; AlGaAs-InGaAs-GaAs; EHF; MM-wave amplifier; W-band; hermetically-sealed package; low noise amplifier; monolithic LNA; pseudomorphic HEMT amplifier; six-stage amplifier; two-stage MMIC amplifier chips; waveguide interface; Assembly; Gallium arsenide; Indium gallium arsenide; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave radiometry; PHEMTs; Packaging; Waveguide components;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406064

Filename

406064