DocumentCode
3218260
Title
Higher quantum efficiency by optimizing GaN photocathode structure
Author
Xiaoqian Fu ; Bengkang Chang ; Biao Li ; Xiaohui Wang ; Yujie Du ; Junju Zhang
Author_Institution
Sch. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
234
Lastpage
235
Abstract
Higher quantum efficiency by optimizing GaN photocathode structure is reported. AlN was used to substitute for GaN as buffer layer, which could act as a potential barrier due to its higher energy gap and reflect electrons back toward the surface direction. Graded-doping structure was used to replace uniform-doping structure, which introduced three built-in electrical fields for the different doping concentrations.
Keywords
III-V semiconductors; aluminium compounds; buffer layers; diffusion barriers; doping profiles; electron field emission; energy gap; gallium compounds; photocathodes; semiconductor doping; wide band gap semiconductors; AlN; GaN; buffer layer; diffusion barrier; doping concentration; electron reflection; energy gap; graded-doping structure; photocathode structure; quantum efficiency; Cathodes; Educational institutions; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644302
Filename
5644302
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