• DocumentCode
    3218487
  • Title

    Study of quantum yield for transmission-mode GaN photocathodes

  • Author

    Wang, X.H. ; Chang, B.K. ; Qian, Y.S. ; Zhang, Y.J. ; Du, X.Q. ; Gao, Peng ; Guo, X.Y.

  • Author_Institution
    Inst. of Electron. Eng. & Optoelectron. Technol., Nanjing Univ. of Sci. & Technol., Nanjing, China
  • fYear
    2010
  • fDate
    14-16 Oct. 2010
  • Firstpage
    232
  • Lastpage
    233
  • Abstract
    In this paper transmission-mode GaN photocathodes was activated by Cs/O, its quantum efficiency curve and the factors which influenced the quantum efficiency mostly were studied. Transmission-mode GaN photocathodes was grown by Metal-Organic Chemical Vapor Deposition (MOCVD).
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; photocathodes; wide band gap semiconductors; Al2O3; Al2O3-AlN; GaN; metal-organic chemical vapor deposition; quantum efficiency curve; quantum yield; transmission-mode photocathodes; Gallium nitride;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-6645-0
  • Type

    conf

  • DOI
    10.1109/IVESC.2010.5644313
  • Filename
    5644313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3218487