Study on depuration technics for negative electron affinity GaN photocathode

Author

Qiao, J.L. ; Chang, B.K. ; Qian, Y.S. ; Li, Bing ; Wang, X.H. ; Gao, Peng

Author_Institution

Sch. of Electron. Eng. & Optoelectron. Tech., Nanjing Univ. of Sci. & Technol., Nanjing, China

fYear

2010

fDate

14-16 Oct. 2010

Firstpage

307

Lastpage

308

Abstract

The traditional corrosion methods based on oxidizing and dissolving can´t remove oxygen (O) and carbon (C) on GaN effectively. This is because GaN has stronger chemical stability, the strong oxidation chemical reagent like H₂O₂ can´t oxidize GaN surface. In addition the oxide on GaN surface can´t be dissolved effectively by the strong acid solution such as HCl or H₂SO₄. The depuration method for GaN photocathode was studied by using NEA photocathode activation system and XPS surface analysis system in this paper.

Keywords

III-V semiconductors; X-ray photoelectron spectra; electron affinity; gallium compounds; oxidation; photocathodes; surface treatment; wide band gap semiconductors; GaN; GaN surface oxidation; HCl solution; NEA photocathode activation system; XPS surface analysis system; chemical stability; depuration method; depuration technics; dissolving; negative electron affinity GaN photocathode; oxidation chemical reagent; sulfuric acid solution; traditional corrosion methods; Cathodes; Gallium nitride; Heating;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6645-0

Type

conf

DOI

10.1109/IVESC.2010.5644317

Filename

5644317