DocumentCode
3218592
Title
Surface analysis for NEA GaAs photocathode
Author
Zhang, J.J. ; Chang, B.K. ; Fu, R.G. ; Qiu, Y.F. ; Qian, Y.S.
Author_Institution
Sch. of Electron. Eng. & Optoelectron. Tech., Nanjing Univ. of Sci. & Technol., Jiangsu, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
221
Lastpage
222
Abstract
To study the effect surface defects imposed on NEA GaAs photocathode, a surface analysis instrument shown in Fig. 1 has been designed, which is composed of a microimager, a 2-D displacement platform, an auto-focus equipment, a computer.
Keywords
III-V semiconductors; electron affinity; gallium arsenide; photocathodes; 2-D displacement platform; GaAs; NEA photocathode; autofocus equipment; computer; microimager; negative electron affinity; surface analysis; surface defects; Educational institutions; Process control;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644320
Filename
5644320
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