DocumentCode
3218617
Title
Low-voltage and high-stability p-type doped blue organic light-emitting diodes with bilayer hole injection layers
Author
Lu, Li ; Yu, J.N. ; Long, Lance ; Yu, F.F. ; Zhang, J.H. ; Zhang, Haijun ; Wei, Bin
Author_Institution
Key Lab. of Adv. Display & Syst. Applic., Shanghai Univ., Shanghai, China
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
319
Lastpage
319
Abstract
We report a low-voltage and high-stability blue OLEDs with a peak at 470 nm, which is composed of tetrafluorotetracyano-quinodimethane(F4-TCNQ) doped 2T-NATA and additional 4,4\´4"-Tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine(2T-NATA) as a hole injection layer (HIL). Compared to undoped device, the operating voltage of p-type doped blue OLEDs can decrease by 1.5 V. Furthermore, the use of 2T-NATA as a blocking layer to fluorine diffusion was found to improve device lifetime and chromatic stability greatly, the half luminance decay reach about 3800 h at the beginning luminance of 3000 cd/m2.
Keywords
brightness; diffusion; organic compounds; organic light emitting diodes; 4,4\´4"-tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine; OLED; bilayer hole injection layers; blocking layer; chromatic stability; device lifetime; fluorine diffusion; half luminance decay; operating voltage; p-type doped blue organic light-emitting diodes; tetrafluorotetracyano-quinodimethane doped 2T-NATA; wavelength 470 nm; Indium tin oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644322
Filename
5644322
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